DISCO DFL7341 laser invisible cutting machine has the following advantages and specifications:
Advantages Low damage, high-precision cutting: DFL7341 uses laser invisible cutting technology to form a modified layer only inside the silicon wafer, suppressing the generation of processing debris, and is suitable for samples with high particle requirements. The cutting groove width can be very narrow, which helps to reduce the cutting path and reduce damage to the wafer
Dry processing technology: The equipment uses dry processing technology, drying and cleaning, and is suitable for processing objects with poor fatigue resistance
Efficient production: DFL7341 is suitable for applications with high production requirements such as LED sapphire, lithium tantalate, and micro-electromechanical systems (MEMS). Its Stealth Dicing™ process allows brittle materials such as silicon carbide (SiC) and gallium nitride (GaN) to be cut without waste.
Wide range of applications: The equipment is suitable for a variety of materials, including sapphire, silicon carbide, ionized gallium (GaAs), etc., and can provide high-quality processing results.
Specifications Main components: Including cassette lift, conveyor, aiming system, processing system, operating system, status indicator, laser engine, chiller, etc.
Accuracy indicators: Working disk accuracy: X-axis axial accuracy ≤0.002mm/210mm, Y-axis axial accuracy ≤0. 003mm/210mm, Y-axis positioning accuracy ≤0.002mm/5mm, Z-axis positioning accuracy ≤0.001mm
Cutting speed: X-axis cutting speed 1-1000 mm/s, Y-axis dimensional resolution 0.1 micron, moving speed 200 mm/s, Z-axis dimensional resolution 0.1 micron, moving 50 mm/s
Applicable materials and thickness: Only supports pure silicon wafer millimeter cutting, silicon wafer thickness is 0.1-0.7, grain size is more than 0.5 mm. The dicing screen contour is about one micron, and there is no dome edge and discomfort on the surface and back of the wafer