Umatshini wokusika we-DISCO wafer DFL7341

Umatshini wokusika ongabonakaliyo we-DISCO DFL7341 laser unezi zibonelelo zilandelayo kunye neenkcukacha:

Izibonelelo Umonakalo ophantsi, ukusika okuchanekileyo okuphezulu: I-DFL7341 isebenzisa iteknoloji yokusika i-laser engabonakaliyo ukwenza umaleko oguqulweyo kuphela ngaphakathi kwe-silicon wafer, ukucinezela isizukulwana sokucubungula i-debris, kwaye ifanelekile kwiisampuli ezineemfuno eziphezulu ze-particle. Ububanzi be-groove bunokuba buncinci kakhulu, obunceda ukunciphisa indlela yokusika kunye nokunciphisa umonakalo kwi-wafer

Itekhnoloji yokucoca itekhnoloji: Isixhobo sisebenzisa itekhnoloji eyomileyo, ukomisa kunye nokucoca, kwaye ifanelekile ukusetyenzwa kwezinto ezinokumelana nokudinwa.

Ukuveliswa ngokufanelekileyo: I-DFL7341 ifanelekile kwizicelo ezineemfuno eziphezulu zokuvelisa ezifana nesafire ye-LED, i-lithium tantalate, kunye neenkqubo ze-micro-electromechanical (MEMS). Inkqubo yayo ye-Stealth Dicing™ ivumela izinto ezinqabileyo ezifana nesilicon carbide (SiC) kunye ne-gallium nitride (GaN) ukuba zisikwe ngaphandle kwenkunkuma.

Uluhlu olubanzi lwezicelo: Isixhobo sifanelekile kwizinto ezahlukeneyo, kubandakanywa isafire, i-silicon carbide, i-ionized gallium (i-GaAs), njl., kwaye inokubonelela ngeziphumo eziphezulu zokusebenza.

Ukucaciswa Amacandelo aphambili: Kubandakanya ukunyuswa kwekhasethi, ukuhanjiswa, inkqubo yokujolisa, inkqubo yokucubungula, inkqubo yokusebenza, isalathisi sesimo, i-injini ye-laser, i-chiller, njl.

Iimpawu ezichanekileyo: Ukuchaneka kwediski yokusebenza: X-axis axial accuracy ≤0.002mm/210mm, i-Y-axis axial accuracy ≤0. 003mm/210mm, i-Y-axis yokuchaneka kokuchaneka ≤0.002mm/5mm, i-Z-axis indawo echanekileyo ≤0.001mm

Isantya sokusika: I-X-axis yokusika isantya 1-1000 mm / s, isisombululo se-Y-axis dimensional 0.1 micron, isantya esihambayo 200 mm / s, isisombululo se-Z-axis dimensional 0.1 micron, ihambisa i-50 mm / s

Izixhobo ezisebenzayo kunye nobukhulu: Ixhasa kuphela ukusika okucocekileyo kwe-silicon wafer millimeter, ubukhulu be-silicon wafer yi-0.1-0.7, ubungakanani beenkozo bungaphezulu kwe-0.5 mm. I-contour yesikrini se-dicing imalunga ne-micron enye, kwaye akukho ngqameko yedome kunye nokungonwabi kumphezulu nasemva kwewafer.